Excimer Laser Annealing (ELA) is a laser process used to convert amorphous silicon (a-Si), the base material for TFTs, into low-temperature polycrystalline silicon (LTPS). In its amorphous state, a-Si has atoms arranged in a disordered manner, making it difficult for electrons to move quickly. As shown in the illustration, when the excimer laser is projected onto the a-Si layer, the irradiated area absorbs energy and recrystallizes, forming a structured monocrystalline silicon cluster. This process is called Excimer Laser Annealing (ELA). After undergoing the ELA process, electron mobility increases, thereby improving the performance of TFTs.
Excimer Laser Annealing (ELA) is a laser process used to convert amorphous silicon (a-Si), the base material for TFTs, into low-temperature polycrystalline silicon (LTPS). In its amorphous state, a-Si has atoms arranged in a disordered manner, making it difficult for electrons to move quickly. As shown in the illustration, when the excimer laser is projected onto the a-Si layer, the irradiated area absorbs energy and recrystallizes, forming a structured monocrystalline silicon cluster. This process is called Excimer Laser Annealing (ELA). After undergoing the ELA process, electron mobility increases, thereby improving the performance of TFTs.
Excimer Laser Annealing (ELA) is a laser process used to convert amorphous silicon (a-Si), the base material for TFTs, into low-temperature polycrystalline silicon (LTPS). In its amorphous state, a-Si has atoms arranged in a disordered manner, making it difficult for electrons to move quickly. As shown in the illustration, when the excimer laser is projected onto the a-Si layer, the irradiated area absorbs energy and recrystallizes, forming a structured monocrystalline silicon cluster. This process is called Excimer Laser Annealing (ELA). After undergoing the ELA process, electron mobility increases, thereby improving the performance of TFTs.
Excimer Laser Annealing (ELA) is a laser process used to convert amorphous silicon (a-Si), the base material for TFTs, into low-temperature polycrystalline silicon (LTPS). In its amorphous state, a-Si has atoms arranged in a disordered manner, making it difficult for electrons to move quickly. As shown in the illustration, when the excimer laser is projected onto the a-Si layer, the irradiated area absorbs energy and recrystallizes, forming a structured monocrystalline silicon cluster. This process is called Excimer Laser Annealing (ELA). After undergoing the ELA process, electron mobility increases, thereby improving the performance of TFTs.